Power Electronics Technology (Q166977)

From geokb
Revision as of 13:42, 24 May 2024 by Sky (talk | contribs) (‎Created a new Item: Added new OpenAlex topic claimed by USGS staff from API)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
This cluster of papers explores advancements in power electronics technology, focusing on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), reliability of power devices, high-temperature electronics, IGBT modules, t
  • Wide Bandgap Semiconductors
  • Reliability
  • Silicon Carbide
  • Power Devices
  • High-Temperature Electronics
  • IGBT Modules
  • GaN Power Devices
  • Thermal Management
  • Failure Modes
  • SiC Nanowires
Language Label Description Also known as
English
Power Electronics Technology
This cluster of papers explores advancements in power electronics technology, focusing on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), reliability of power devices, high-temperature electronics, IGBT modules, t
  • Wide Bandgap Semiconductors
  • Reliability
  • Silicon Carbide
  • Power Devices
  • High-Temperature Electronics
  • IGBT Modules
  • GaN Power Devices
  • Thermal Management
  • Failure Modes
  • SiC Nanowires

Statements