Item talk:Q167219

{

 "OpenAlex": {
   "display_name": "First-Principles Calculations for III-Nitride Semiconductors",
   "description": "This cluster of papers focuses on the first-principles calculations, properties, and applications of III-nitride semiconductors, particularly Gallium Nitride (GaN) and its alloys. It covers topics such as defects and impurities, band parameters, high-power light-emitting diodes (LEDs), AlGaN/GaN HEMTs, nanowires, UV LEDs, and their applications in solid-state lighting.",
   "keywords": [
     "III-Nitrides",
     "Semiconductors",
     "Light-Emitting Diodes",
     "GaN",
     "AlGaN/GaN HEMTs",
     "Defects and Impurities",
     "Solid-State Lighting",
     "Nanowires",
     "UV LEDs",
     "Band Parameters"
   ],
   "ids": {
     "openalex": "https://openalex.org/T10099",
     "wikipedia": "https://en.wikipedia.org/wiki/III-nitride_semiconductor"
   },
   "subfield": {
     "id": "https://openalex.org/subfields/3104",
     "display_name": "Condensed Matter Physics"
   },
   "field": {
     "id": "https://openalex.org/fields/31",
     "display_name": "Physics and Astronomy"
   },
   "domain": {
     "id": "https://openalex.org/domains/3",
     "display_name": "Physical Sciences"
   },
   "updated_date": "2024-08-12T05:26:04.207333",
   "created_date": "2024-01-23",
   "type": "topic",
   "oa_id": "T10099",
   "id": "https://openalex.org/T10099"
 }

}