Item talk:Q166449

{

 "OpenAlex": {
   "display_name": "Atomic Layer Deposition Technology",
   "description": "This cluster of papers focuses on the advances in atomic layer deposition (ALD) technology, particularly in the context of high-k dielectrics, gate oxides, and semiconductor devices. It covers topics such as thin film growth, dielectric breakdown mechanisms, metal gate transistors, interface engineering, and the impact of negative bias temperature instability (NBTI) degradation on device performance.",
   "keywords": [
     "Atomic Layer Deposition",
     "High-k Dielectrics",
     "Gate Oxides",
     "Semiconductor Devices",
     "Nanoelectronics",
     "Thin Film Growth",
     "Dielectric Breakdown",
     "Metal Gate Transistors",
     "Interface Engineering",
     "NBTI Degradation"
   ],
   "ids": {
     "openalex": "https://openalex.org/T10472",
     "wikipedia": "https://en.wikipedia.org/wiki/Atomic_layer_deposition"
   },
   "subfield": {
     "id": "https://openalex.org/subfields/2208",
     "display_name": "Electrical and Electronic Engineering"
   },
   "field": {
     "id": "https://openalex.org/fields/22",
     "display_name": "Engineering"
   },
   "domain": {
     "id": "https://openalex.org/domains/3",
     "display_name": "Physical Sciences"
   },
   "updated_date": "2024-08-12T05:36:23.669556",
   "created_date": "2024-01-23",
   "type": "topic",
   "oa_id": "T10472",
   "id": "https://openalex.org/T10472"
 }

}