Power Electronics Technology (Q166977)

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Revision as of 13:24, 30 August 2024 by Sky (talk | contribs) (‎Changed label, description and/or aliases in en, and other parts: modified description with assistance from Llama 3.1)
"Advances in power electronics using new semiconductors and devices."
  • Wide Bandgap Semiconductors
  • Reliability
  • Silicon Carbide
  • Power Devices
  • High-Temperature Electronics
  • IGBT Modules
  • GaN Power Devices
  • Thermal Management
  • Failure Modes
  • SiC Nanowires
Language Label Description Also known as
English
Power Electronics Technology
"Advances in power electronics using new semiconductors and devices."
  • Wide Bandgap Semiconductors
  • Reliability
  • Silicon Carbide
  • Power Devices
  • High-Temperature Electronics
  • IGBT Modules
  • GaN Power Devices
  • Thermal Management
  • Failure Modes
  • SiC Nanowires

Statements