Atomic Layer Deposition Technology (Q166449)

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Revision as of 13:02, 30 August 2024 by Sky (talk | contribs) (‎Changed label, description and/or aliases in en, and other parts: modified description with assistance from Llama 3.1)
Advanced thin film growth using precise layering for improved semiconductor device performance.
  • Atomic Layer Deposition
  • High-k Dielectrics
  • Gate Oxides
  • Semiconductor Devices
  • Nanoelectronics
  • Thin Film Growth
  • Dielectric Breakdown
  • Metal Gate Transistors
  • Interface Engineering
  • NBTI Degradation
Language Label Description Also known as
English
Atomic Layer Deposition Technology
Advanced thin film growth using precise layering for improved semiconductor device performance.
  • Atomic Layer Deposition
  • High-k Dielectrics
  • Gate Oxides
  • Semiconductor Devices
  • Nanoelectronics
  • Thin Film Growth
  • Dielectric Breakdown
  • Metal Gate Transistors
  • Interface Engineering
  • NBTI Degradation

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