Atomic Layer Deposition Technology (Q166449): Difference between revisions

Latest revision as of 20:32, 12 September 2024

Advanced thin film growth using precise layering for improved semiconductor device performance.

Language	Label	Description	Also known as
English	Atomic Layer Deposition Technology	Advanced thin film growth using precise layering for improved semiconductor device performance.

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@@ aliases / en / 0 / aliases / en / 0 @@
-Atomic Layer Deposition
@@ aliases / en / 1 / aliases / en / 1 @@
-High-k Dielectrics
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-Gate Oxides
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-Semiconductor Devices
@@ aliases / en / 4 / aliases / en / 4 @@
-Nanoelectronics
@@ aliases / en / 5 / aliases / en / 5 @@
-Thin Film Growth
@@ aliases / en / 6 / aliases / en / 6 @@
-Dielectric Breakdown
@@ aliases / en / 7 / aliases / en / 7 @@
-Metal Gate Transistors
@@ aliases / en / 8 / aliases / en / 8 @@
-Interface Engineering
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-NBTI Degradation
@@ description / en / description / en @@
-This cluster of papers focuses on the advances in atomic layer deposition (ALD) technology, particularly in the context of high-k dielectrics, gate oxides, and semiconductor devices
+Advanced thin film growth using precise layering for improved semiconductor device performance.
@@ Property / same as @@
-https://openalex.org/T10472
@@ Property / same as: https://openalex.org/T10472 / rank @@
-Normal rank
@@ Property / OpenAlex ID @@
+T10472
@@ Property / OpenAlex ID: T10472 / rank @@
+Normal rank