Atomic Layer Deposition Technology (Q166449): Difference between revisions

From geokb
(‎Changed label, description and/or aliases in en, and other parts: modified description with assistance from Llama 3.1)
(‎Changed label, description and/or aliases in en, and other parts: removed aliases from OpenAlex keywords)
 
(One intermediate revision by the same user not shown)
aliases / en / 0aliases / en / 0
Atomic Layer Deposition
aliases / en / 1aliases / en / 1
High-k Dielectrics
aliases / en / 2aliases / en / 2
Gate Oxides
aliases / en / 3aliases / en / 3
Semiconductor Devices
aliases / en / 4aliases / en / 4
Nanoelectronics
aliases / en / 5aliases / en / 5
Thin Film Growth
aliases / en / 6aliases / en / 6
Dielectric Breakdown
aliases / en / 7aliases / en / 7
Metal Gate Transistors
aliases / en / 8aliases / en / 8
Interface Engineering
aliases / en / 9aliases / en / 9
NBTI Degradation
Property / same as
 
Property / same as: https://openalex.org/T10472 / rank
Normal rank
 
Property / OpenAlex ID
 
Property / OpenAlex ID: T10472 / rank
 
Normal rank

Latest revision as of 20:32, 12 September 2024

Advanced thin film growth using precise layering for improved semiconductor device performance.
Language Label Description Also known as
English
Atomic Layer Deposition Technology
Advanced thin film growth using precise layering for improved semiconductor device performance.

    Statements