Atomic Layer Deposition Technology (Q166449): Difference between revisions
From geokb
(Created a new Item: Added new OpenAlex topic claimed by USGS staff from API) |
(Changed label, description and/or aliases in en, and other parts: modified description with assistance from Llama 3.1) |
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| description / en | description / en | ||
Advanced thin film growth using precise layering for improved semiconductor device performance. | |||
Revision as of 13:02, 30 August 2024
Advanced thin film growth using precise layering for improved semiconductor device performance.
- Atomic Layer Deposition
- High-k Dielectrics
- Gate Oxides
- Semiconductor Devices
- Nanoelectronics
- Thin Film Growth
- Dielectric Breakdown
- Metal Gate Transistors
- Interface Engineering
- NBTI Degradation
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Atomic Layer Deposition Technology |
Advanced thin film growth using precise layering for improved semiconductor device performance. |
|
